Fast switching and oscillatory behavior of nonlinear transistors in terahertz regime

Authors

Yee Ang
L Ang
C Zhang, University of WollongongFollow
Zhongshui Ma

RIS ID

143435

Publication Details

Ang, Y., Ang, L., Zhang, C. & Ma, Z. (2018). Fast switching and oscillatory behavior of nonlinear transistors in terahertz regime. Optics InfoBase Conference Papers

Abstract

© 2018 The Author(s). We show that pure crossed Andreev reflection can be generated in an N/S/N device exclusively without the parasitic local Andreev reflection and elastic co tunnelling over a wide range of bias and Fermi levels. The pure non-local conductance exhibits rapid on/off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. This provides multiple knobs to manipulate the non-local current and the device acts as a highly tunable transistor that operates purely in the non-local transport regime.