Fast Switching and Double Resonance of Nonlinear Transistors in Terahertz Regime

Authors

Yee Sin Ang, Singapore University of Technology And DesignFollow
Lawrence K. Ang, Singapore University of Technology And Design
C Zhang, University of WollongongFollow
Zhongshui Ma, Chinese Academy Of Sciences, Peking University, Collaborative Innovation Center Of Quantum MatterFollow

RIS ID

131857

Publication Details

Ang, Y. S., Ang, L. K., Zhang, C. & Ma, Z. (2018). Fast Switching and Double Resonance of Nonlinear Transistors in Terahertz Regime. 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (p. 686). United States: IEEE.

Abstract

We show that pure crossed Andreev reflection can be generated in an N/S/N device exclusively without the parasitic local Andreev reflection and elastic co tunnelling over a wide range of bias and Fermi levels. The pure non-local conductance exhibits rapid on/off switching and terahertz oscillation when the Fermi levels in the normal and the superconducting leads are varied. The transport characteristics exhibit double resonance ransport in terahertz regime.