Electric Control of Exchange Bias Effect in FePS3-Fe5GeTe2van der Waals Heterostructures

Publication Name

Nano Letters

Abstract

Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS3-Fe5GeTe2. By applying a solid protonic gate, the EB effects were repeatably electrically tuned. The EB field reaches up to 23% of the coercivity and the blocking temperature ranges from 30 to 60 K under various gate-voltages. The proton intercalations not only tune the average magnetic exchange coupling but also change the antiferromagnetic configurations in the FePS3 layer. These result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step toward vdW heterostructure-based magnetic logic for future low-energy electronics.

Open Access Status

This publication may be available as open access

Volume

22

Issue

15

First Page

6166

Last Page

6172

Funding Number

12074126

Funding Sponsor

Ontario Ministry of Natural Resources and Forestry

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Link to publisher version (DOI)

http://dx.doi.org/10.1021/acs.nanolett.2c01370