Magnetic modulation of terahertz waves via spin-polarized electron tunneling

Authors

Zuanming Jin, University of Shanghai for Science and Technology
Caihua Wan, Institute of Physics Chinese Academy of Sciences
Xiufeng Han, Institute of Physics Chinese Academy of Sciences
Zhenxiang Cheng, University of Wollongong
Chao Zhang, University of Wollongong
Alexey V. Balakin, University of Shanghai for Science and Technology
Alexander P. Shkurinov, University of Shanghai for Science and Technology
Yan Peng, University of Shanghai for Science and Technology
Guohong Ma, Shanghai University
Yiming Zhu, University of Shanghai for Science and Technology
Songlin Zhuang, University of Shanghai for Science and Technology

Publication Name

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Abstract

We demonstrate that the tunneling magnetoresistance (TMR) can be used to modulate terahertz (THz) wave propagation through a magnetic tunnel junctions (MTJ). Operating at the THz frequency range, a maximal modulation depth of 60% is reached for the parallel state of the MTJ with the thickness of 77.45 nm, by using a small magnetic field of 30 mT. The THz conductivity spectrum of the MTJ is governed by the spin-dependent electron tunneling. This findings open that the MTJ device will have potential applications in THz magnetic modulators, filtering and sensing.

Open Access Status

This publication is not available as open access

Volume

2021-August