Anomalous Hall effect in Nd-doped Bi1.1Sb0.9STe2 topological insulator single crystals

Publication Name

Physical Chemistry Chemical Physics

Abstract

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantum anomalous Hall effect, which has been observed in magnetic-topological-insulator-based devices. In this work, we report successful doping of rare-earth element Nd into Bi1.1Sb0.9STe2 bulk-insulating topological insulator single crystals, in which the Nd moments are ferromagnetically ordered at ∼100 K. Benefiting from the in-bulk-gap Fermi level, electronic transport behaviors dominated by the topological surface states are observed in the ferromagnetic region. At low temperatures, strong Shubnikov-de Haas oscillations with a nontrivial Berry phase are observed. The topological insulator with long range magnetic ordering in Nd-doped Bi1.1Sb0.9STe2 single crystals provides a good platform for quantum transport studies and spintronic applications.

Open Access Status

This publication is not available as open access

Volume

26

Issue

3

First Page

2638

Last Page

2645

Funding Number

11974155

Funding Sponsor

Australian Institute of Nuclear Science and Engineering

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Link to publisher version (DOI)

http://dx.doi.org/10.1039/d3cp05850f