Relationship between orientation of CeO2 films and surface morphology

Authors

Dongqi Shi, University of WollongongFollow
Mihail Ionescu, ANSTOFollow
Jeff McKinnon, University of WollongongFollow
Wu Ming Chen, University of Wollongong
S. X. Dou, University of WollongongFollow

RIS ID

7611

Publication Details

Shi, D., Ionescu, M., McKinnon, J., Chen, W. & Dou, S. X. (2002). Relationship between orientation of CeO2 films and surface morphology. In B. Balachandran, D. Gubser & K. Hartwig (Eds.), Proceedings of the International Cryogenic Materials Conference (pp. 519-524). New York: American Institute of Physics.

Abstract

Pure c-axis orientation CeO2 films were deposited on YSZsingle crystal substrates_ by pulse laser deposition (PLD) in oxygen. The optimum epitaxial growth temperature for a high level of c-axis orientation is 7900 C, and it is related to the morphology of CeO₂ grains. The more circular the shape of the grains is, the better the caxis orientation and the smoothness of CeO₂ film surface are. This correlation appears to be an intrinsic feature of CeO₂ growth, independent of the type of substrate or the deposition method. Also it was found that the topography of the film surface grown by PLD reflects the morphology.