Time-domain THz spectroscopy using acceptor-doped GaAs photoconductive emitters

Authors

D Schoenherr, Technische Universitat Darmstadt
Hans L. Hartnagel, Technische Universitat Darmstadt
Stuart Hargreaves, University of WollongongFollow
Roger A. Lewis, University of WollongongFollow
M Henini, University of Nottingham

RIS ID

24206

Publication Details

Schoenherr, D., Hartnagel, H. L., Hargreaves, S., Lewis, R. A. and Henini, M. (2008). Time-domain THz spectroscopy using acceptor-doped GaAs photoconductive emitters. Semiconductor Science and Technology, 23 (105012), 1-7.

Abstract

We investigate the factors that control the emission of THz radiation by the photoconductive mechanism in Be acceptor-doped GaAs. These factors include the magnitude and direction of the applied bias, the optical pump power, the placement of the pump beam relative to the electrodes, the form of the electrodes and the Be doping level. We address the question as to what constitutes the best THz emitter and quantitatively compare these photoconductive emitters with two other classes of THz emitters, namely, electro-optic and surface-field emitters.