RIS ID
27675
Abstract
We have examined the emission of terahertz-frequency radiation from indium phosphide (InP) under ultrashort pulses of near-infrared radiation. We have investigated nominally undoped, as well as p-doped and n-doped material. Compared to the emitter Indium Arsenide (InAs) we find that the total THz field from undoped InP is an order of magnitude less, but with the strength shifted to higher frequencies.
Publication Details
Hargreaves, S. and Lewis, R. A. (2008). Emission of terahertz-frequency electromagnetic radiation from indium phosphide under excitation by short pulses of near-infrared radiation. 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. (pp. 1-2). IEEExplore: IEEE.