Preparation and properties of YSZ-doped YBCO films grown by the TFA-MOD method

Authors

Min Liu, Beijing University of TechnologyFollow
Hongli Suo, Beijing University of Technology
Shuai Ye, Beijing University of Technology
Dongqi Shi, University of WollongongFollow
Yuejen Zhao, Beijing University of Technology
Xiao Tang, Beijing University of Technology
Lin Ma, Beijing University of Technology
Qi Li, University of WollongongFollow
Lin Wang, University of Wollongong
Meiling Zhou, Beijing University of Technology
S. X. Dou, University of WollongongFollow

RIS ID

24913

Publication Details

Liu, M., Suo, H., Ye, S., Shi, D., Tang, X., Ma, L., Li, Q., Wang, L., Zhou, M., Dou, S. X. & Zhao, Y. (2008). Preparation and properties of YSZ-doped YBCO films grown by the TFA-MOD method. Superconductor Science and Technology, 21 115012-115016.

Abstract

YBa2Cu3O7-delta (YBCO) films with Zr doping have been prepared successfully by the trifluoroacetate metal-organic deposition (TFA-MOD) method through dissolving Zr acety lacetonate in the precursor solution. Yttria-stabilized zirconia (YSZ) nanoparticles were detected in the doped YBCO films by x-ray diffraction (XRD) and scanning electron microscopy (SEM). From the analysis of XRD omega and Phi scans, the doped films have better out-of-plane and in-plane textures than those of the un-doped YBCO film. Although the doped YBCO films have a lower critical transition temperature (T-c) than that of un-doped YBCO film, a very significant enhancement of critical current density (J(c)) is displayed as compared to the un-doped film at high applied fields. A high J(c) near 10(6) A cm(-2) at 1 T and a J(c) of 10(5) A cm(-2) at 5 T were observed in 6% doped Zr film, which are 5 times and 25 times the J(c) values of the un-doped film in the same applied fields, respectively, indicating an optimal defect density created by 6% Zr doping.