Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems
RIS ID
22645
Abstract
We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II andbroken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such asystem, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via intersubbandtransition within the same material layer. As a result, two sharp absorption peaks can be observed and the intensity of thistwo-colour absorption depends rather weakly on temperature up to room-temperature.
Publication Details
Wei, X. F., Xu, W., Zhang, J., Zeng, Z. & Zhang, C. (2008). Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems. Physica E: Low-Dimensional Systems and Nanostructures, 40 1069-1071.