Far-infrared spectroscopy of P ion-implanted Si

Authors

Roger A. Lewis, University of WollongongFollow
Nik Stavrias, University of Melbourne
Steven Prawer, University of Melbourne
Paul Spizzirri, University of Melbourne

RIS ID

24747

Publication Details

Lewis, R. A., Spizzirri, P., Stavrias, N. & Prawer, S. (2008). Far-infrared spectroscopy of P ion-implanted Si. Proceedings of the Australian Institute of Physics 18th National Congress (pp. 96-99). Australia: Australian Institute of Physics.

Abstract

The spectroscopy of impurity atoms in elemental Si has a long history and has received a fillip in recent years with the development of the Kane quantum computer. In this study we report on one method of incorporating P (and P dimers) into the semiconductor host lattice, namely iron-implantation, and one method of analysing for the impurity, namely far-infrared magnetospectroscopy.