Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

Authors

S X. Dou, University of WollongongFollow
Olga V. Shcherbakova, University of WollongongFollow
W. K. Yeoh, University of Wollongong
J. H. Kim, University of WollongongFollow
Saeid Soltanian, University of WollongongFollow
Xiaolin Wang, University of WollongongFollow
C. Senatore, University of Geneva
R. Flukiger, University of Geneva
M. Dhalle, University of Twente
O. Husnjak, University of Zagreb
E. Babic, University of Zagreb

RIS ID

20102

Publication Details

Dou, S. X., Shcherbakova, O. V., Yeoh, W., Kim, J., Soltanian, S., Wang, X., Senatore, C., Flukiger, R., Dhalle, M., Husnjak, O. & Babic, E. (2007). Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping. Physical Review Letters, 98 097002-1-097002-4.

Abstract

A comparative study of pure, SiC, and C doped MgB₂ wires has revealed that the SiC doping allowed C substitution and MgB₂ formation to take place simultaneously at low temperatures. C substitution enhances H_c2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_c. The irreversibility field (H_irr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB₂.

Grant Number

ARC/DP0770205

Additional Grant Number

http://purl.org/au-research/grants/ARC/DP0770205