Large electrocaloric effect of highly (100)-oriented 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin films with a Pb(Zr0.3Ti0.7)O3/PbOx buffer layer

Authors

Zuyong FengFollow
Dongqi Shi, University of WollongongFollow
Rong Zeng, University of WollongongFollow
S. X. Dou, University of WollongongFollow

RIS ID

41630

Publication Details

Feng, Z., Shi, D., Zeng, R. Dou, S. (2011). Large electrocaloric effect of highly (100)-oriented 0.68PbMg_1/3Nb_2/3O3-0.32PbTiO₃ thin films with a Pb(Zr_0.3Ti_0.7)O₃/PbO_x buffer layer. Thin Solid Films, 519 (16), 5433-5436.

Abstract

0.68PbMg_1/3Nb_2/3O₃–0.32PbTiO₃ (PMN–PT) thin films with a lead zirconate titanate Pb(Zr_0.3Ti_0.7)O₃ (PZT)/PbO_x buffer layer were deposited on Pt/TiO₂/SiO₂/Si substrates by radio frequency magnetron sputtering technique, and pure perovskite crystalline phase with highly (100)-preferred orientation was formed in the ferroelectric films. We found that the highly (100)-oriented thin films possess not only excellent dielectric and ferroelectric properties but also a large electrocaloric effect (13.4 K at 15 V, i.e., 0.89 K/V) which is attributed to the large electric field-induced polarization and entropy change during the ferroelectric–paraelectric phase transition. The experimental results indicate that the use of PZT/PbO_x buffer layer can induce the crystal orientation and phase purity of the PMN–PT thin films, and consequently enhance their electrical properties.