RIS ID
14205
Abstract
A novel spectroscopy technique that uses parallel-plate waveguides for the characterisation of highly conductive materials in the terahertz (THz) frequency regime is presented. This guided-wave technique resolves some of the fundamental problems associated with standard THz time-domain spectroscopy (THz-TDS) as applied to these optically dense materials. The technique is demonstrated by measuring the conductivity of highly phosphorus doped silicon
Publication Details
This article was originally published as: Mendis, R, Guided-wave THz time-domain spectroscopy of highly doped silicon using parallel-plate waveguides, Electronic Letters, January 2006, 42(1), 19-21. Copyright IEEE 2006.