Facile synthesis and characterization of gallium oxide (beta-Ga2O3) 1D nanostructures: Nanowires, nanoribbons, and nanosheets

Authors

Guoxiu Wang, University of WollongongFollow
Jinsoo Park, University of WollongongFollow
Xiang y. Kong, Shanghai Jiao Tong University
Paton Wilson, Shanghai Jiao Tong University
Zhixin Chen, University of WollongongFollow
Jung-Ho Ahn, Andong National University

RIS ID

26364

Publication Details

Wang, G., Park, J., Kong, X. y., Wilson, P. R., Chen, Z. Ahn, J. (2008). Facile synthesis and characterization of gallium oxide (beta-Ga2O3) 1D nanostructures: Nanowires, nanoribbons, and nanosheets. Crystal Growth and Design, 8 (6), 1940-1944.

Abstract

beta-Ga2O3 one-dimensional (ID) nanostructures including nanowires, nanoribbons and nanosheets were synthesized via a combined carbon thermal reduction and chemical vapor deposition (CVD) approach. All of these nanostructures consist of single-crystalline monoclinic structure, which has been confirmed via high-resolution TEM and electron diffraction analysis. We obtained beta-Ga2O3 nanowires at high temperature zone, nanosheets, and nanoribbons at medium temperature zone at low-pressure environments. We found that beta-Ga2O3 nanowires and nanoribbons have diversified different growth directions. The optical properties of beta-Ga2O3 nanowires and nanoribbons from UV-vis spectra show that the bandgaps are red-shifted by 0.13 eV.