RIS ID
42801
Abstract
Very fine nano-SiC particles (nm) were doped into a MgB2 superconductor. The influence of self-field supercurrent on the high-field performance of the nano-SiC-doped MgB2/Fe wires is discussed based on comparison of the critical current densities of the in situ processed nano-SiCdoped MgB2 wires and those of the nano-SiC-doped MgB2/Fe wires processed by the combination of in situ/ex situ methods.
Grant Number
ARC/DP0770205
Publication Details
Li, W. X., Zeng, R., Wang, J. L., Li, Y. Dou, S. X. (2012). Dependence of Magnetoelectric Properties on Sintering Temperature for nano-SiC Doped MgB/Fe Wires Made by Combined In-Situ/Ex-Situ Process. Journal of Applied Physics, 111 07E135-1-07E135-3.