Preparation and properties of Y1-xHoxBa2Cu3O7-d thin films by TFA-MOD method
RIS ID
46639
Abstract
"Y(1-x)Ho(x)Ba(2)Cu(3)O(7-delta), (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) thin films were prepared on LaAlO(3) (001) substrates by trifluoroacetate metal organic deposition (TFA-MOD) without change of the processing parameters. The highest J(c) was attributed to the sample of Y(0.6)Ho(0.4)Ba(2)Cu(3)O(7-delta) thin film, whose critical current density is about 1.6 times as compared to that of YBa(2)Cu(3)O(7-delta) thin film at 77 K and self field. The flux pinning type was not varied with Ho substitution and can be attributed to delta l pinning model, which is attributed to the close ionic radius between the Y3(+) and Ho3(+) ions. The improvement off J(c) by Ho substitution without change of the processing parameters will provide an effective route to enhance the J(c) of YBCO-based thin films using TFA-MOD method. (C) 2011 Elsevier B.V. All rights reserved."
Grant Number
ARC/DP0770205
Publication Details
Jian, H., Li, Q., Shi, D., Zhang, L., Yang, z., Dou, S., Zhu, X. Sun, Y. (2011). Preparation and properties of Y1-xHoxBa2Cu3O7-d thin films by TFA-MOD method. Physica C: Superconductivity and its Applications, 471 (23-24), 1669-1674.