Abstract
Zeeman absorption spectra have been obtained for B and Ga in Ge for B∥〈100〉 in the Voigt configuration with plane-polarized radiation. All twelve allowed transitions were observed for both the G and D lines. The corresponding excited states of these two lines for both impurities behave identically; two recent theoretical results are in good agreement. The measurements are a sensitive probe of the ground states; there are differences between the behavior of these for the two acceptors.
Publication Details
This article was originally published as: Fisher, P, Takacs, GJ, Vickers, REM & Warner, AD, High-field Zeeman effect of shallow acceptors in germanium, Physical Review B, 1993, 47(19), 12999-13002. Copyright 1993 American Physical Society. The original journal can be found here.