Packaging effects on RadFET sensors for high energy physics experiments

Authors

Julien Mekki, CERN
Laurent Dusseau, University Montpellier II, France
Maurice Glaser, CERN
Susanna Guatelli, ANSTOFollow
Michael Moll, CERN
Maria Grazia Pia, INFN Sezione di Genova
Federico Ravotti, CERNFollow

RIS ID

31739

Publication Details

Mekki, J., Dusseau, L., Glaser, M., Guatelli, S., Moll, M., Pia, M. Grazia. & Ravotti, F. (2009). Packaging effects on RadFET sensors for high energy physics experiments. IEEE Transactions on Nuclear Science, 56 (4), 2061-2069.

Abstract

RadFETs in customized chip carrier packages are installed in the LHC Experiments as radiation monitors. The package influence on the dose measurement in the complex LHC radiation environment is evaluated using Geant4 simulations and experimental data.