RIS ID
9672
Abstract
The energy levels of the donor impurity phosphorous and the acceptor impurity gallium in the elemental semiconductor host germanium have been investigated by measuring the absorption of radiation from a far-infrared laser as magnetic field intensity is varied.
Publication Details
Freeth, CA & Lewis, RA, Far-infrared Laser Magnetospectroscopy of Donors and Acceptors in Ge, In Cashion, J, Finlayson, T, Paganin, D, Smith, A & Troup, G (Eds), Condensed Matter and Materials Meeting Australia: Australian and New Zealand Institutes of Physics, 2003.