Far-infrared laser photoconductivity of n-GaAs multiple quantum wells in a pulsed magnetic field

Authors

R J. Heron, University of Wollongong
R A. Lewis, University of WollongongFollow
A V. Skougarevsky, University of New South Wales
R P. Starrett, University of New South Wales
R G. Clark, University of New South Wales
M Henini, University of Nottingham

RIS ID

113494

Publication Details

Heron, R. J., Lewis, R. A., Skougarevsky, A. V., Starrett, R. P., Clark, R. G. & Henini, M. (1998). Far-infrared laser photoconductivity of n-GaAs multiple quantum wells in a pulsed magnetic field. Physica B: Condensed Matter, 246-247 290-293.

Abstract

Far-infrared laser magnetospectroscopy of a multiple quantum well (MQW) structure, δ-doped with Si donors in both the wells and the barriers, has been carried out over the energy range 6–18 meV using a pulsed magnet, the calibration of which is confirmed by cyclotron resonance measurements on bulk n-GaAs. Apart from cyclotron resonance, the MQW exhibits a spectral feature at a magnetic field exceeding that of the 1s→2p₊ bulk transition at the same laser wavelength. This feature is attributed to a transition involving electrons in the well which are bound to donor sites in the barriers.