Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

Authors

M Bruzzi, University of Florence
D Bisello, University of Padova
L Borrello, University DiPisa
E Borchi, University of Florence
M Boscardin, University of Trento
A Candelori, University of Padova
D Creanza, Dipartimento Interateneo Di Fisica
G-F Dalla Betta, University of Trento
M Depalma, Dipartimento Interateneo Di Fisica
S Dittongo, INFN Italy
E Focardi, University of Florence
V Khomenkov, University of Padova
A Litovchenko, University of Padova
A Macchiolo, University of Florence
N Manna, Dipartimento Interateneo Di Fisica
D Menichelli, University of Florence
A Messineo, University DiPisa
S Miglio, University of Florence
M Petasecca, University of PerugiaFollow
C Piemonte, University of Trento
G U. Pignatel, University of Perugia
V Radicci, Dipartimento Interateneo Di Fisica
S Ronchin, University of Trento
M Scaringella, University of Florence
G Segneri, University DiPisa
D Sentenac, University DiPisa
C Tosi, University of Florence
N Zorzi, University of Trento

RIS ID

80234

Publication Details

Bruzzi, M., Bisello, D., Borrello, L., Borchi, E., Boscardin, M., Candelori, A., Creanza, D., Dalla Betta, G., Depalma, M., Dittongo, S., Focardi, E., Khomenkov, V., Litovchenko, A., Macchiolo, A., Manna, N., Menichelli, D., Messineo, A., Miglio, S., Petasecca, M., Piemonte, C., Pignatel, G. U., Radicci, V., Ronchin, S., Scaringella, M., Segneri, G., Sentenac, D., Tosi, C. & Zorzi, N. (2005). Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 552 (1-2), 20-26.

Abstract

We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4×1014 cm-2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 °C and the final passivation oxide was omitted. All rights reserved.