Characterisation of epitaxial TiO2 thin films grown on MgO(0 0 1) using atomic layer deposition

Authors

D RG Mitchell, Institute of Materials and Engineering Science, ANSTOFollow
D J. Attard, Institute of Materials and Engineering Science, ANSTOFollow
G Triani, Institute of Materials and Engineering Science, ANSTO

RIS ID

83287

Publication Details

Mitchell, D. RG., Attard, D. J. and Triani, G. (2005). Characterisation of epitaxial TiO2 thin films grown on MgO(0 0 1) using atomic layer deposition. Journal of Crystal Growth, 285 (1-2), 208-214.

Abstract

Thin films of TiO2 have been deposited onto MgO(0 0 1) substrates using atomic layer deposition at 300 1C. Plan and cross-sectional transmission electron microscopy (TEM), X-ray diffraction and atomic force microscopy have been used to understand the nature of the films. X-ray and electron diffraction showed that a polycrystalline, epitaxial anatase film was produced. The c-axis of the anatase was parallel to the MgO(0 0 1) surface with two orientational variants at right angles to each other in the plane of the film, each aligned with an MgO cube axis. Plan-view and crosssectional TEM showed that the grain structure of the film reflected this orientation relationship, with the grain morphology comprising two sets of roughly tetragonal grains. Also present was a small fraction of equiaxed, anatase grains which were randomly oriented. Roughness measurement using atomic force microscopy showed that the epitaxial anatase films were quite smooth, in comparison to equivalent non-aligned films grown on silicon.