La and Nb codoped BiFeO3 multiferroic thin films on LaNiO3/Si and IrO2/Si substrates

Authors

Zhenxiang Cheng, University of WollongongFollow
Xiaolin Wang, University of WollongongFollow
Hideo Kimura, National Institute for Materials Science, Japan
Kiyoshi Ozawa, National Institute for Materials Science, JapanFollow
S X. Dou, University of WollongongFollow

RIS ID

23017

Publication Details

Cheng, Z, Wang, X, Kimura, H, Ozawa, K & Dou, S (2008), La and Nb codoped BiFeO3 multiferroic thin films on LaNiO3/Si and IrO2/Si substrates, Applied Physics Letters, 92(9), pp. 092902-1-092902-3.

Abstract

Nb and La codoped BiFeO₃ thin films were fabricated on oxide bottom electrodes, LaNiO₃/Si and IrO₂/Si, by pulsed laser deposition method. The doped BiFeO₃ thin film capacitor on LaNiO₃showed a remnant polarization of more than 75 µC/cm² in a saturated hysteresis loop. The same La and Nb codoped BiFeO₃ thin film capacitors on IrO₂ showed a larger remnant polarization, while with a significant contribution from the leakage current. Furthermore, the doped BiFeO₃ capacitor on the LaNiO₃ bottom electrode showed worse fatigue resistance than the film on IrO₂. All the doped BiFeO3 thin films showed weak ferromagnetism at room temperature.