Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors
RIS ID
144247
Abstract
© 2020, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature. Two-dimensional (2D) heterostructures based on layered transition metal dichalcogenides (TMDs) have attracted increasing attention for the applications of the next-generation high-performance integrated electronics and optoelectronics. Although various TMD heterostructures have been successfully fabricated, epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging. In addition, photodetectors based on such heterostructures have seldom been studied. Here, we report the synthesis of high-quality vertical NbS2/MoS2 metallic-semiconductor heterostructures. By using NbS2 as the contact electrodes, the field-effect mobility and current on-off ratio of MoS2 can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact, respectively. By using NbS2 as contact, the photodetector performance of MoS2 is much improved with higher responsivity and less response time. Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.
Publication Details
Zhang, P., Bian, C., Ye, J., Cheng, N., Wang, X., Jiang, H., Wei, Y., Zhang, Y., Du, Y., Bao, L., Hu, W. & Gong, Y. (2020). Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors. Science China Materials,