Ultra-thin Ga nanosheets: Analogues of high pressure Ga(iii)
RIS ID
139158
Abstract
Ultra-thin Ga islands of β-Ga(110), high-pressure phase Ga(iii) and a new phase of stripe superstructure are obtained on Si(111). STM combined with theoretical calculations suggests that the stripe superstructure originates from Ga(iii) (001) with stacking rearrangement. This work provides a new strategy for synthesizing low-dimensional nanomaterials and accessing high pressure phases.
Publication Details
Li, Y., Zhang, J., Yin, F., Wang, Y., Feng, H., Zhou, S. & Du, Y. (2019). Ultra-thin Ga nanosheets: Analogues of high pressure Ga(iii). Nanoscale, 11 (37), 17201-17205.