Determination of the relative influences of carbon doping and disorder on field and temperature dependent critical current density of MgB2

Authors

S K. Chen, Universiti Putra Malaysia, Serdang, Selangor, Malaysia
Xiaofeng Xu, University of WollongongFollow
Jung Ho Kim, University of WollongongFollow
S X. Dou, University of WollongongFollow
J L. MacManus-Driscoll, University of Cambridge, Cambridge, U.K

RIS ID

31315

Publication Details

Chen, SK, Xu, X, Kim, J, Dou, SX & MacManus-Driscoll, JL (2009), Determination of the relative influences of carbon doping and disorder on field and temperature dependent critical current density of MgB2, Superconductor Science and Technology, 22(12), pp. 1-5.

Abstract

SiC was mixed with Mg and B and reacted by either a one-step in situ or two-step method at 650 or 850 °C. By doing so, it was possible to determine the extent to which scattering via C doping influences the magnitude of field dependent critical current density, J_c(H), compared to pinning via generation of microstructural disorder. The one-step reaction method leads to Mg₂Si formation and at the same time to more C doping of MgB₂ than the two-step method. Carbon increases both the irreversibility field, H_irr, and upper critical field, H_c2 (TK). However, for the temperatures (6 and 20 K) and fields (up to 7 T) studied, pinning rather than scattering overwhelmingly dominates the magnitude of the field dependent critical current density.

Grant Number

ARC/DP0770205

Additional Grant Number

http://purl.org/au-research/grants/ARC/DP0770205