Engineering electrical transport in α-MgAgSb to realize high performances near room temperature

Authors

Jingdan Lei, Henan University
De Zhang, Henan University
Weibao Guan, Henan University
Zhenxiang Cheng, University of Wollongong, Henan UniversityFollow
Chao Wang, Henan UniversityFollow
Yuanxu Wang, Henan University

RIS ID

128652

Publication Details

Lei, J., Zhang, D., Guan, W., Cheng, Z., Wang, C. & Wang, Y. (2018). Engineering electrical transport in α-MgAgSb to realize high performances near room temperature. Physical Chemistry Chemical Physics, 20 (24), 16729-16735.

Abstract

α-MgAgSb shows promise as a potential new low-temperature thermoelectric (TE) material and has been widely researched recently. We explored the effects of sintering conditions on the properties of MgAgSb-based thermoelectric materials through manipulating a spark plasma sintering system (SPS), where Ag vacancies and Mg point defects play a dominant role. The transport properties of MgAgSb were optimized effectively and efficiently, especially for electrical transport. As a result, we obtained a steady power factor (PF) of ∼17 μW cm-1K-2, owing to the optimal carrier concentration of 9.8 x 1019cm-3. Additionally, α-MgAgSb exhibits an ultralow lattice thermal conductivity of around 0.45 Wm-1K-1at 375 K. More importantly, a high ZT value of 0.85 was achieved below 375 K, approaching room temperature.