A low loss of Y-doped BiFeO3 ceramics and its magnetic and dielectric properties

Authors

Qiang Li, University of Electronic Science and Technology of China
Shengxiang Bao, University of Electronic Science and Technology of China
Jie Li, University of Electronic Science and Technology of China
Tao Hong, University of Electronic Science and Technology of China
Libo Ai, University of Electronic Science and Technology of China
Yongda Hu, University of Electronic Science and Technology of China
Yanhua Sun, University of WollongongFollow

RIS ID

117261

Publication Details

Li, Q., Bao, S., Li, J., Hong, T., Ai, L., Hu, Y. & Sun, Y. (2017). A low loss of Y-doped BiFeO3 ceramics and its magnetic and dielectric properties. 18th International Conference on Electronic Packaging Technology, ICEPT 2017 (pp. 117-121). United States: IEEE.

Abstract

With the development of electronic information technology, the heating problem in microwave components is becoming more and more important. Reducing dielectric loss is an effective way to reduce component heat. Bi 1-x Y x FeO 3 (x=0.02, 0.04, 0.06, 0.08) ceramics were synthesized by traditional state solid method, and the effects of Y 3+ ions on magnetic and dielectric properties were studied. The XRD results indicate that all Y-doped samples had successfully synthesized BiFeO 3 phase. Micrographs were investigated by SEM, which showed all the samples have irregular shape. With the Y 3+ ions increasing, Saturation magnetization increased 0.1225 eμg to 1.9941 emug/g. Dielectric behavior was measured by RF Impedance analyzer. The dielectric constant showed a tendency to increase and the maximum value reached 41. Dielectric loss is reduced to around 0.004. Dielectric constant and loss kept a steady in a wide range frequency of 1 M-1.5 GHz. The lower dielectric loss allows the material to be applied to microwave devices and components.