The effects of graphene doping on the in-field J(c) of MgB2 wires

Authors

Xun Xu, University of WollongongFollow
W. X. Li, University of WollongongFollow
Yun Zhang, University of WollongongFollow
Kaludewa Sujeewa Buddhimali De Silva, University of WollongongFollow
Jung Ho Kim, University of WollongongFollow
Seyong Choi, Buscan Center, Korea Basic Science Institute, Buscan, Republic of Korea

RIS ID

57537

Publication Details

Xu, X, Li, W, Zhang, Y, De Silva, KSB, Kim, J & Choi, S (2012), The Effects of Graphene Doping on the In-Field J(c) of MgB2 Wires, Journal of Nanoscience and Nanotechnology, 12(2), pp. 1402-1405.

Abstract

The field and temperature dependence of the critical current density J_ct were measured for both un-doped and graphene doped MgB₂/Fe wires manufactured by 99.999% Crystalline Boron and 10% excess Magnesium (99%, 325 mesh). At 4.2 K and 10 T, J_ct was estimated to be for the wire sintered at 800 degrees C for 30 minutes, the doped sample is almost improved as one order, compared with the best un-doped sample. At the same time, the temperature dependence of the upper critical field (H_c2) and the irreversibility field (H_irr) for the samples will also be included from the resistance (R) temperature (T). A significant increase in the upper critical field is the main cause of the enhancement of the critical current density, J_ct, in the high field region. The calculated active cross-sectional area fraction (A_F) represents the connectivity factor between adjacent grains. This value is decreased with wire samples, which is why the improvement of transport J_ct, is lower than the improvement of magnetic J_cm in diffusion bulk sample.