Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe

Authors

Yilin Wang, Chinese Academy Of Sciences
Yeping Jiang, Tsinghua University, Chinese Academy of Sciences
Mu Chen, Tsinghua University, Chinese Academy Of Sciences
Zhi Li, Chinese Academy of SciencesFollow
Canli Song, Tsinghua University, Chinese Academy of Sciences
Lili Wang, Chinese Academy of Sciences
Ke He, Chinese Academy of Sciences
Xi Chen, Tsinghua University
Xu-Cun Ma, Chinese Academy of Sciences
Qi-Kun Xue, Tsinghua University, Chinese Academy of SciencesFollow

RIS ID

115253

Publication Details

Wang, Y., Jiang, Y., Chen, M., Li, Z., Song, C., Wang, L., He, K., Chen, X., Ma, X. & Xue, Q. (2012). Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe. Journal of Physics: Condensed Matter, 24 475604-1-475604-5.

Abstract

We investigate the heteroepitaxial growth of Bi2Se3 films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi2Se3 on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moire pattern ´ originating from the lattice mismatch between Bi2Se3 and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi2Se3 thin films, which can be ascribed to the charge transfer at the interface.