Enhancing the field emission properties of Se-doped GaN nanowires

Authors

Enling Li, Xi’an University of Technology, University of WollongongFollow
Guishuang Wu, Xi’an University of Technology
Zhenduo Cui, Xi’an University of Technology
Deming Ma, Xi’an University of Technology
Wei Shi, Xi’an University of Technology
Xiaolin Wang, University of WollongongFollow

RIS ID

114595

Publication Details

Li, E., Wu, G., Cui, Z., Ma, D., Shi, W. & Wang, X. (2016). Enhancing the field emission properties of Se-doped GaN nanowires. Nanotechnology, 27 265707-1-265707-8.

Abstract

Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of 20-120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on field (2.9 V μm−1 ) compared with the pure GaN NWs (7.0 V μm−1 ). In addition, density functional theory calculations indicate that the donor states near the Fermi level are mainly formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower than those of pure GaN NWs.