Pressure-enhanced light emission and its structural origin in Er:GdVO4

Authors

Fang Hong, Center for High Pressure Science and Technology Advanced Research, Lawrence Berkeley National Laboratory
Binbin Yue, Center for High Pressure Science and Technology Advanced Research, Lawrence Berkeley National Laboratory
Zhenxiang Cheng, University of WollongongFollow
Hui Shen, Shanghai institute of TechnologyFollow
Ke Yang, Shanghai Synchrotron Radiation Facility (SSRF)
Xinguo Hong, Brookhaven National Laboratory
Bin Chen, Center for High Pressure Science and Technology Advanced Research
Ho-Kwang Mao, Center for High Pressure Science and Technology Advanced Research, Carnegie Institution of Washington

RIS ID

111780

Publication Details

Hong, F., Yue, B., Cheng, Z., Shen, H., Yang, K., Hong, X., Chen, B. & Mao, H. (2017). Pressure-enhanced light emission and its structural origin in Er:GdVO4. Applied Physics Letters, 110 (2), 021903-1-021903-5.

Abstract

Rare earth phosphors have been widely studied because of their sharp emission lines and excellent optical performance. However, photoluminescence (PL) tuning by crystal field in Er3+ embedded phosphors has always been a challenge. Here, we demonstrate that pressure can help to enhance the red and green light emission simultaneously in Er:GdVO4. Synchrotron X-ray diffraction investigations revealed that a structural phase transition was responsible for the enhancement. Our work brightens the future prospects for applications of Er3+-based PL materials in various fields, such as high power lasers and (bio) medical imaging.

Grant Number

ARC/FT0990287