Rectification magnetoresistance device: Experimental realization and theoretical simulation

Authors

Kun Zhang, Shandong University
Qikun Huang, Shandong University
Yi Yan, University of California, Santa BarbaraFollow
Xiaolin Wang, University of WollongongFollow
Jing Wang, Shandong University
Shi-Shou Kang, Shandong University
Yu-Feng Tian, Shandong University

RIS ID

111118

Publication Details

Zhang, K., Huang, Q., Yan, Y., Wang, X., wang, J., Kang, S. & Tian, Y. (2016). Rectification magnetoresistance device: Experimental realization and theoretical simulation. Applied Physics Letters, 109 (21), 213503-1-213503-5.

Abstract

A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.