Mechanical and electrical switching of local ferroelectric domains of K0.5Bi4.5Ti4O15 film

Authors

Hongyang Zhao, Wuhan Institute of TechnololgyFollow
Kang Cai, Wuhan Institute of Technology
Zhenxiang Cheng, University of WollongongFollow
Zhibin Ma, Wuhan University of Technology
Hideo Kimura, National Institute For Materials ScienceFollow
Tingting Jia, National Institute For Materials Science

RIS ID

105528

Publication Details

Zhao, H., Cai, K., Cheng, Z., Ma, Z., Kimura, H. & Jia, T. (2016). Mechanical and electrical switching of local ferroelectric domains of K0.5Bi4.5Ti4O15 film. Journal of Materials Science: Materials in Electronics, 27 (6), 5613-5617.

Abstract

Ferroelectric/Piezoelectric K0.5Bi4.5Ti4O15 (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electrical field and mechanical force in KBT film was demonstrated. The dark and bright contrast represents the PFM response of the up and down polarized domains, which can be written by a dc bias of ±12 V or a mechanical force of 40-50 nN. The successful demonstration of mechanical force switching of ferroelectric domain in KBT film other than electric field provides a novel mean for information storage and sensors.