Pseudo-relaxor behaviour induced by Maxwell-Wagner relaxation

RIS ID

31525

Publication Details

Wang, C & Dou, SX (2009), Pseudo-relaxor behaviour induced by Maxwell-Wagner relaxation, Solid State Communications, 149(45-46), pp. 2017-2020.

Abstract

We performed a further investigation on the Maxwell–Wagner (MW) relaxation-induced relaxor-like dielectric response characterized by a broad peak in the real part of the dielectric permittivity as a function of temperature. Based on the double-layer MW model formulated by Catalan et al. (2000), an empirical formula was derived to describe the temperature dependence of the peak intensity. It was also found that the temperature dependence of the peak position can be characterized by an Arrhenius-like relation. The differences between the true relaxor and MW-related relaxor behaviours are also discussed.

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Link to publisher version (DOI)

http://dx.doi.org/10.1016/j.ssc.2009.08.031