Growth and properties of fully strained SrCoOx (x approximate to 2.8) thin films on DyScO3

Authors

S Hu, University of New South Wales
Zhilian Yue, University of WollongongFollow
J Lim, KAIST
S J. Callori, University of New South Wales
Joel Bertinshaw, University of New South Wales
A Ikeda-Ohno, University of New South Wales
T Ohkochi, Japan Synchrotron Radiation Research Institute
C H. Yang, Chinese Academy Of Sciences, Nanjing University of Information Science and TechnologyFollow
Xiaolin Wang, University of WollongongFollow
Clemens Ulrich, University of New South Wales
Jan Seidel, University of New South WalesFollow

RIS ID

101424

Publication Details

Hu, S., Yue, Z., Lim, J. S., Callori, S. J., Bertinshaw, J., Ikeda-Ohno, A., Ohkochi, T., Yang, C. H., Wang, X., Ulrich, C. & Seidel, J. (2015). Growth and properties of fully strained SrCoO_x (x approximate to 2.8) thin films on DyScO₃. Advanced Materials Interfaces, 2 (8), 1-4.

Abstract

High quality epitaxial SrCoO_x (oxygen deficient SrCoO₃) thin films were grown on (110) DyScO₃ substrates by pulsed laser deposition.The disappearance of half order peaks in X-ray diffraction as well as the XAS at the O K-edge indicates an oxygen content of x approximate to 2.8 in the thin films. Magnetization measurements reveal that the specific substrate strain suppresses the ferromagnetism found in the corresponding bulk material and the emergence of an antiferromagnetic-type spin correlation as predicted by theoretical calculations. Our work demonstrates that the magnetism can be tuned by in-plane strain in SrCoO_x thin films.