Heterovalent-doping-enabled efficient dopant luminescence and controllable electronic impurity via a new strategy of preparing II−VI nanocrystals

Authors

Jian Liu, Beijing Institute of Technology
Qian Zhao, Beijing Institute of Technology
Jia-Long Liu, Beihang University
Yi-Shi Wu, Chinese Academy of Sciences
Yan Cheng, Beihang University
Mu-Wei Ji, Beijing Institute of Technology
Hong-Mei Qian, Beijing Institute of Technology
Weichang Hao, Beijing University of Aeronautics and Astronautics, Beihang University, University of Wollongong
Linjuan Zhang, Shanghai Institute of Applied Physics, Chinese Academy of Physics, Beijing Synchrotron Radiation Facility
Xiang-Jun Wei, Shanghai Institute of Applied Physics
Shuo-Guo Wang, University of Science and Technology Beijing
Jia-Tao Zhang, Beijing Institute of Technology
Yi Du, University of WollongongFollow
S X. Dou, University of WollongongFollow
He-Sun Zhu, Beijing Institute of Technology

RIS ID

99535

Publication Details

Liu, J., Zhao, Q., Liu, J., Wu, Y., Cheng, Y., Ji, M., Qian, H., Hao, W., Zhang, L., Wei, X., Wang, S., Zhang, J., Du, Y., Dou, S. & Zhu, H. (2015). Heterovalent-doping-enabled efficient dopant luminescence and controllable electronic impurity via a new strategy of preparing II−VI nanocrystals. Advanced Materials, 27 (17), 2753-2761.

Abstract

Substitutional heterovalent doping represents an effective method to control the optical and electronic properties of nanocrystals (NCs). Highly monodisperse II−VI NCs with deep substitutional dopants are presented. The NCs exhibit stable, dominant, and strong dopant fluorescence, and control over n- and p-type electronic impurities is achieved. Large-scale, bottom-up superlattices of the NCs will speed up their application in electronic devices.