Metal-organic deposition of biaxially textured CeO2-based buffer layers

Authors

YoungKuk Kim, Korea Institute of Materials Science
Jaimoo Yoo, University of WollongongFollow
Kookchae Chung, Korea Institute of Materials Science
Xiaolin Wang, University of WollongongFollow
S X. Dou, University of WollongongFollow

RIS ID

31537

Publication Details

Kim, Y, Yoo, J, Chung, K, Wang, X & Dou, SX (2009), Metal-organic deposition of biaxially textured CeO2-based buffer layers, Materials Letters, 63(9-10), pp. 800-802.

Abstract

Biaxially textured CeO₂-based oxide films with crack-free and smooth surface were prepared by metal-organic deposition (MOD) on Ni-W alloy tapes after annealing. In this study, addition of B₂O₃-based precursors to precursor solution and their effects on crystallinity and surface roughness of the CeO₂-based oxide films were investigated. As the amount of added B₂O₃-based precursors increased, the relative intensity of CeO₂ (200) peak was monotonously increased and much smoother surface was obtained. Microcracks in CeO₂ films were successfully suppressed by substituting gadolinium for part of cerium in the CeO₂ films. In addition to this, a biaxially textured Ce_0.75Gd_0.25O₂-4.5% B₂O₃ film (Δθ = 4.8°, Δϕ = 7.4°) with smooth surface (R_q = 2.7 nm) was successfully grown on the Ni-W tape after annealing at 900 °C.