Time-domain THz spectroscopy using acceptor-doped GaAs photoconductive emitters
We investigate the factors that control the emission of THz radiation by the photoconductive mechanism in Be acceptor-doped GaAs. These factors include the magnitude and direction of the applied bias, the optical pump power, the placement of the pump beam relative to the electrodes, the form of the electrodes and the Be doping level. We address the question as to what constitutes the best THz emitter and quantitatively compare these photoconductive emitters with two other classes of THz emitters, namely, electro-optic and surface-field emitters.
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