Ultrahigh Energy Density of Antiferroelectric PbZrO3-Based Films at Low Electric Field

Publication Name

Advanced Functional Materials


Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO3 (PZO), a small amount of isovalent (Sr2+) / aliovalent (La3+) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field EA simultaneously, while maintaining a stable forward switching field EF. An ultrahigh energy density of 50 J cm−3 is achieved for the nominal Pb0.925La0.05ZrO3 (PLZ5) films at low electric fields of 1 MV cm−1, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient-relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density.

Open Access Status

This publication is not available as open access

Funding Number


Funding Sponsor

National Natural Science Foundation of China



Link to publisher version (DOI)