AlScN-Based Dual-Mode Devices with Temperature Compensated Strategy and Process Optimization
Publication Name
IEEE Sensors Journal
Abstract
MEMS resonators with interdigital transducer (IDT) based on aluminum nitride (AlN) thin-film (a few micrometers thickness) materials gradually arouse researchers' interest due to their ability to excite multiple modes of acoustic waves. However, the low electromechanical coupling coefficient is still one of the main reasons that limit the AlN-based resonators. In this article, we demonstrate a design journey for 10% scandium-doped AlN-based dual-mode acoustic wave resonators. Also, we investigated the influence of stack architectures with and without introduced AlN interlays, as well as the influence of stacked film thicknesses, on the performance of resonators. Simulation results show that changes in the SiO2 film thickness have different effects on the TCF of the two acoustic wave modes, providing a way for sensors to decouple two parameters that jointly affect the frequency drift. Moreover, measured results show that the introduced AlN interlayer (AlN-IL) induces a better crystalline orientation of the scandium-doped AlN (AlScN) thin film and a higher coupling coefficient of the leaky longitudinal (LL) mode (K2 : from 4.19% to 4.96%), which make the resonators have great potential in surface acoustic wave (SAW)-based applications such as sensors and high-frequency applications.
Open Access Status
This publication is not available as open access
Volume
22
Issue
24
First Page
24027
Last Page
24035