Emerging weak antilocalization effect in Ta0.7Nb0.3Sb2 semimetal single crystals

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Frontiers of Physics


Weak antilocalization (WAL) effect is commonly observed in low-dimensional systems, three-dimensional (3D) topological insulators and semimetals. Here, we report the growth of high-quality Ta0.7Nb0.3Sb2 single crystals via the chemical vapor transport (CVT). Clear sign of the WAL effect is observed below 50 K, probably due to the strong spin—orbital coupling in 3D bulk. In addition, it is worth noting that a relatively large MR of 120% appears under 1 T magnetic field at T = 2 K. Hall measurements and two-band model fitting results reveal high carrier mobility (>1000 cm2· V−1·s−1 in 2–300 K region), and off-compensation electron/hole ratio of ∼8:1. Due to the angular dependence of the WAL effect and the fermiology of the Ta0.7Nb0.3Sb2 crystals, interesting magnetic-field-induced changes of the symmetry of the anisotropic magnetoresistance (MR) from two-fold (≤ 0.6 T) to four-fold (0.8–1.5 T) and finally to two-fold (≥ 2 T) are observed. This phenomenon is attributed to the mechanism shift from the low-field WAL dominated MR to WAL and fermiology co-dominated MR and finally to high-field fermiology dominated MR. All these signs indicate that Ta0.7Nb0.3Sb2 may be a topological semimetal candidate, and these magnetotransport properties may attract more theoretical and experimental exploration of the (Ta,Nb)Sb2 family. [Figure not available: see fulltext.].

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National Natural Science Foundation of China



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