Title

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Publication Name

Technical Digest - International Electron Devices Meeting, IEDM

Abstract

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

Open Access Status

This publication may be available as open access

Volume

2021-December

First Page

38.2.1

Last Page

38.2.4

Funding Sponsor

Australian Research Council

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Link to publisher version (DOI)

http://dx.doi.org/10.1109/IEDM19574.2021.9720587