Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration
Authors
Dai Ming Tang, National Institute for Materials Science
Sergey V. Erohin, National University of Science & Technology (MISIS)
Dmitry G. Kvashnin, National University of Science & Technology (MISIS)
Victor A. Demin, Emanuel Institute of Biochemical Physics, Russian Academy of Sciences
Ovidiu Cretu, National Institute for Materials Science
Song Jiang, Institute of Metal Research Chinese Academy of Sciences
Lili Zhang, Institute of Metal Research Chinese Academy of Sciences
Peng Xiang Hou, Institute of Metal Research Chinese Academy of Sciences
Guohai Chen, National Institute of Advanced Industrial Science and Technology
Don N. Futaba, National Institute of Advanced Industrial Science and Technology
Yongjia Zheng, The University of Tokyo
Rong Xiang, The University of Tokyo
Xin Zhou, National Institute for Materials Science
Feng Chun Hsia, National Institute for Materials Science
Naoyuki Kawamoto, National Institute for Materials Science
Masanori Mitome, National Institute for Materials Science
Yoshihiro Nemoto, National Institute for Materials Science
Fumihiko Uesugi, National Institute for Materials Science
Masaki Takeguchi, National Institute for Materials Science
Shigeo Maruyama, The University of Tokyo
Hui Ming Cheng, Institute of Metal Research Chinese Academy of Sciences
Yoshio Bando, Tianjin University
Chang Liu, Institute of Metal Research Chinese Academy of Sciences
Pavel B. Sorokin, National University of Science & Technology (MISIS)
Dmitri Golberg, National Institute for Materials Science
Abstract
Carbon nanotubes have a helical structure wherein the chirality determines whether they are metallic or semiconducting. Using in situ transmission electron microscopy, we applied heating and mechanical strain to alter the local chirality and thereby control the electronic properties of individual single-wall carbon nanotubes. A transition trend toward a larger chiral angle region was observed and explained in terms of orientation-dependent dislocation formation energy. A controlled metal-to-semiconductor transition was realized to create nanotube transistors with a semiconducting nanotube channel covalently bonded between a metallic nanotube source and drain. Additionally, quantum transport at room temperature was demonstrated for the fabricated nanotube transistors with a channel length as short as 2.8 nanometers.
Open Access Status
This publication is not available as open access
Funding Number
FL160100089
Funding Sponsor
Australian Research Council
