Electronic properties of silicon nanotubes with distinct bond lengths

Authors

James M. Hill, University of WollongongFollow
J E. Bunder, University of WollongongFollow

RIS ID

29330

Publication Details

Bunder, J. E. & Hill, J. M. (2009). Electronic properties of silicon nanotubes with distinct bond lengths. Physical Review B, 79 (3), 233401-1-233401-4.

Abstract

We analyze the band structure of a silicon nanotube with sp^3 bonds and variable bond lengths. This nanotube has many similarities with a carbon nanotube including a band gap at half-filling and conducting behavior which is dependent on structure. We derive a simple formula which predicts when the nanotube is metallic. We discuss our results in the context of a nanotube subject to small applied strains as this provides a means of distorting bond lengths in a predictable way and may be tested experimentally. The affects of strain on nanotube conductance has important implications for sensor technology.