RIS ID

7612

Publication Details

Shi, D., Ionescu, M., McKinnon, J., Chen, W. & Dou, S. X. (2002). Research of surface-oxidation epitaxy of NiO films on cube textured Ni tapes. In B. Balachandran, D. Gubser & K. Hartwig (Eds.), Proceedings of the International cryogenic materials Conference (pp. 525-530). New York: American Institute of Physics.

Abstract

Thin films of NiO were fabricated in air by surface-oxidation epitaxy (SOE) on biaxially-textured Ni substrate, for use as buffer layers for YBCO coated conductors. The surface-oxidation conditions such as the temperature and the reaction time, as well as the cooling rate, playa determining role in the process of epitaxial growth of the NiO layer. A continuous, biaxially-aligned textured NiO layer, was obtained for a 10 min oxidation in air at 1120°C,and acooling rate of 150 Klh. The roughness of the NiO layer is mostly controlled by a coarsening of some NiO grains .

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