Publication Details

This article was originally published as Heron, RJ, Lewis, RA, Simmonds, PE, Starrett, RP, Skougarevsky, AV, Clark, RG and Stanley, CR, Central-cell corrections for Si and S in GaAs in a strong magnetic field, Journal of Applied Physics, 85(2), 1999, 893-896. Copyright American Institute of Physics 1999. Original journal article available here


The central-cell correction has been determined experimentally for the two donor impurities S and Si in GaAs. Data have been obtained for magnetic fields to 39 T, corresponding to γ~6. The observed behavior is in good agreement with theory. The analysis permits accurate evaluation of zero-field central-cell corrections, yielding 0.110 and 0.059 meV for S and Si, respectively.

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