Publication Details

This article was originally published as: Zhang,C, Lerch, MLF, Martin,AD, et al, Plasmon assisted resonant tunneling in a double barrier heterostructure, Physical Review Letters, 1994, 72(21), 3397-3400. Copyright 1994 American Physical Society. The original journal can be found here.


When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling current is investigated. Experimental data taken inside a region of apparent bistability in one device reveal a satellite on the high energy side of the current resonance in the I(V) characteristic. A theoretical model based on the many-body transfer Hamiltonian formalism shows that a plasmon excitation has remarkably similar structure. Magnetic field data support the plasmon satellite interpretation.

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