A spectroscopic investigation has been made of the p3/2 and p1/2 transitions and the bound hole associated Fano resonances of indium in silicon. Accurate values have been obtained for the transition energies of many lines. The parameters characterizing the Fano resonances have been determined and the behavior of the Fano resonances under uniaxial stress has been studied. The Fano resonances show a stress splitting similar to that of their p3/2 counterparts. Detailed piezospectroscopic data for the lines 1, 2, 3, 4, 4A, 2p, and 3p under 111, 110, and 100 compression permit a more accurate determination of deformation potential constants than previously obtained with some significant differences and the determination of some previously unknown deformation potential constants.